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	Influence of open-tube Ga diffusion on the characteristics for thyristor
	Wen RM ; Pei SH
	1998
会议名称	symposium on power semiconductor materials and devices
会议日期	dec 01-04, 1997
会议地点	boston, ma
页码	219-222
通讯作者	wen rm chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	open-tube ga diffusion into a sio2/si structure was used for fabrication of the high speed thyristor. the advantages of open-tube ga diffusion are as follows; it is easier to operate and easier to control the profile of the ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.
英文摘要	open-tube ga diffusion into a sio2/si structure was used for fabrication of the high speed thyristor. the advantages of open-tube ga diffusion are as follows; it is easier to operate and easier to control the profile of the ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:20z (gmt). no. of bitstreams: 1 3041.pdf: 215304 bytes, checksum: 388c66565b336049970f21c9cfea340c (md5) previous issue date: 1998; mat res soc.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	mat res soc.
会议录	power semiconductor materials and devices, 483
会议录出版者	materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa
会议录出版地	506 keystone drive, warrendale, pa 15088-7563 usa
学科主题	半导体材料
语种	英语
ISSN号	0272-9172
ISBN号	1-55899-388-6
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13877]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wen RM,Pei SH. Influence of open-tube Ga diffusion on the characteristics for thyristor[C]. 见:symposium on power semiconductor materials and devices. boston, ma. dec 01-04, 1997.

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