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| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
作者: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu
  收藏 | 浏览/下载：24/0 | 提交时间：2018/11/30 |
| Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
作者: S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang
收藏 | 浏览/下载：32/0 | 提交时间：2018/07/11 |
| Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文
Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5
作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu
收藏 | 浏览/下载：32/0 | 提交时间：2018/07/11 |
| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li
收藏 | 浏览/下载：28/0 | 提交时间：2018/07/11 |
| AlGaN基深紫外发光二极管和激光器关键技术研究 学位论文
博士, 北京: 中国科学院研究生院, 2016
田迎冬
收藏 | 浏览/下载：82/0 | 提交时间：2016/06/01
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| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏 | 浏览/下载：25/0 | 提交时间：2017/03/10 |
| Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 期刊论文
chinese physics b, 2016, 卷号: 25, 期号: 2, 页码: 027102
Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Zong-Shun Liu; Jian-Jun Zhu; Ling-Cong Le; Xiao-Jing Li; Xiao-Guang He; Li-Qun Zhang; Hui Yang
收藏 | 浏览/下载：25/0 | 提交时间：2017/03/10 |
| Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity 期刊论文
ieee journal of photovoltaics, 2016, 卷号: 6, 期号: 2, 页码: 454-459
Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Jian-Jun Zhu; Zong-Shun Liu; Ling-Cong Le; Xiao-Guang He; Xiao-Jing Li; Li-Qun Zhang; Jian-Ping Liu; Hui Yang
收藏 | 浏览/下载：22/0 | 提交时间：2017/03/10 |
| Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文
journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang
收藏 | 浏览/下载：21/0 | 提交时间：2017/03/10 |
| GaN high electron mobility transistors with AlInN back barriers 期刊论文
journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19
X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
收藏 | 浏览/下载：13/0 | 提交时间：2017/03/10 |
