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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Wei, XC; Zhao, YW; Dong, ZY; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 zinc oxide  X-ray diffraction  defects  single crystal   Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhao, YW; Zhang, F; Zhang, R; Dong, ZY; Wei, XC; Zeng, YP; Li, JM 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09 zinc oxide  defect  vacancy   Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.143505 Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Shi SL (Shi S. L.); Beling CD (Beling C. D.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 DISLOCATIONS  DEGRADATION   Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101 Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.) 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/29 LIGHT-EMITTING-DIODES   Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.252101 Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Liang JW (Liang J. W.); Hao XP (Hao X. P.); Wei L (Wei L.); Li X (Li X.); Li XY (Li X. Y.); Gong HM (Gong H. M.) 收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11 YELLOW LUMINESCENCE  ELECTRON-BEAM  VACANCIES   Electrical characterization of Er- and Pr-implanted GaN films 期刊论文 applied physics letters, 2005, 卷号: 86, 期号: 15, 页码: art.no.152111 Song SF; Chen WD; Zhang CG; Bian LF; Hsu CC; Lu LW; Zhang YH; Zhu JJ 收藏  |  浏览/下载：91/46  |  提交时间：2010/03/17 DEFECTS   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：87/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION