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科研机构
半导体研究所 [8]
内容类型
期刊论文 [7]
会议论文 [1]
发表日期
2010 [4]
2008 [1]
2006 [1]
2005 [1]
1998 [1]
学科主题
光电子学 [8]
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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:127/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316
Wu CM (Wu ChaoMin)
;
Shang JZ (Shang JingZhi)
;
Zhang BP (Zhang BaoPing)
;
Zhang JY (Zhang JiangYong)
;
Yu JZ (Yu JinZhong)
;
Wang QM (Wang QiMing)
收藏
  |  
浏览/下载:73/2
  |  
提交时间:2010/05/04
MOCVD
DBR
high-reflectivity
nitride
SURFACE-EMITTING LASER
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804
Guo X (Guo Xi)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Wang H (Wang Hui)
;
Zhang SM (Zhang Shu-Ming)
;
Qiu YX (Qiu Yong-Xin)
;
Xu K (Xu Ke)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2010/08/17
in-plane grazing incidence x-ray diffraction
gallium nitride
mosaic structure
biaxial strain
CHEMICAL-VAPOR-DEPOSITION
LATTICE-CONSTANTS
ALN
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:
Wang YT
;
Zhao DG
;
Zhang SM
;
Yang H
;
Jiang DS
收藏
  |  
浏览/下载:146/11
  |  
提交时间:2010/04/04
Nitride materials
Crystal growth
X-ray diffraction
TIME-RESOLVED PHOTOLUMINESCENCE
LIGHT-EMITTING-DIODES
PIEZOELECTRIC FIELDS
LASER-DIODES
DEPENDENCE
RECOMBINATION
POLARIZATION
DYNAMICS
GROWTH
MOCVD
Investigation on the structural origin of n-type conductivity in InN films
期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H
;
Jiang, DS
;
Wang, LL
;
Sun, X
;
Liu, WB
;
Zhao, DG
;
Zhu, JJ
;
Liu, ZS
;
Wang, YT
;
Zhang, SM
;
Yang, H
收藏
  |  
浏览/下载:53/1
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
GAN FILMS
DISLOCATION SCATTERING
LAYER THICKNESS
INDIUM NITRIDE
BAND-GAP
VACANCIES
Strain evolution in GaN layers grown on high-temperature AlN interlayers
期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.)
;
Yao DZ (Yao D. Z.)
;
Chen J (Chen J.)
;
Zhu JJ (Zhu J. J.)
;
Zhao DG (Zhao D. G.)
;
Jiang DS (Jiang D. S.)
;
Yang H (Yang H.)
;
Liang JW (Liang J. W.)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
STRESS EVOLUTION
DEFECT STRUCTURE
EPITAXIAL GAN
THIN-FILMS
ALGAN
DISLOCATIONS
RELAXATION
REDUCTION
Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer
期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 12, 页码: art.no.121914
作者:
Yang H
;
Yang H
;
Wang H
;
Jiang DS
;
Zhang SM
收藏
  |  
浏览/下载:106/19
  |  
提交时间:2010/03/17
CHEMICAL-VAPOR-DEPOSITION
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes
会议论文
conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998
Wang GH
;
Ma XY
;
Zhang YF
;
Peng HI
;
Wang ST
;
Li YZ
;
Chen LH
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/10/29
LED
coupled distributed Bragg reflector
MOCVD
AlGaInP
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