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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117 作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H 收藏  |  浏览/下载：49/3  |  提交时间：2011/07/05 DIODES  EFFICIENCY   Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503 作者:  Dong Z;  Huang BJ 收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05 optoelectronic integrated circuit  complementary metal-oxide-semiconductor technology  silicon-based light emitting device  electroluminescence  AVALANCHE BREAKDOWN  PHOTON-EMISSION  CURRENT-DENSITY  DIODES  MODEL  ELECTROLUMINESCENCE  SUPERLATTICES  EFFICIENCY  JUNCTIONS  LEDS   Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector 期刊论文 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292 Cai LE; Zhang BP; Zhang JY; Wu CM; Jiang F; Hu XL; Chen M; Wang QM 收藏  |  浏览/下载：43/1  |  提交时间：2011/07/05 DIODES   Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 23, 页码: article no.233304 Ran GZ; Jiang DF; Kan Q; Chen HD 收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05 DIODES  PHOTONICS  PLASMONICS  EFFICIENCY   A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes 期刊论文 applied physics b-lasers and optics, 2009, 卷号: 97, 期号: 2, 页码: 465-468 Ding K (Ding, K.); Zeng YP (Zeng, Y. P.); Wei XC (Wei, X. C.); Li ZC (Li, Z. C.); Wang JX (Wang, J. X.); Lu HX (Lu, H. X.); Cong PP (Cong, P. P.); Yi XY (Yi, X. Y.); Wang GH (Wang, G. H.); Li JM (Li, J. M.) 收藏  |  浏览/下载：165/45  |  提交时间：2010/03/08 Defect influence on luminescence efficiency of GaN-based LEDs 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 371-374 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11 defects  GaN  luminescence efficiency  LED   Defect influence on luminescence efficiency of GaN-based LEDs 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：475/18  |  提交时间：2010/03/29 defects