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长春光学精密机械与物... [3]
大连理工大学 [2]
北京航空航天大学 [2]
兰州理工大学 [1]
西安交通大学 [1]
金属研究所 [1]
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期刊论文 [11]
发表日期
2019 [11]
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Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties
期刊论文
SMALL, 2019, 页码: 9
作者:
Cai, Zhengyang
;
Shen, Tianze
;
Zhu, Qi
;
Feng, Simin
;
Yu, Qiangmin
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2021/02/02
doping
dual-additive chemical vapor deposition
electronic properties
field effect transistors
hydrogen evolution reaction
MoS2
Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 26, 页码: 23382-23391
作者:
Lee, Youngsu
;
Um, Doo-Seung
;
Lim, Seongdong
;
Lee, Hochan
;
Kim, Minsoo P.
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2019/11/15
heterojunction
multifunctional devices
black phosphorus
III-V compound semiconductor
nanomembrane
Dielectric and thermal properties of micro/nano boron nitride co-filled EPDM composites for high-voltage insulation
期刊论文
MICRO & NANO LETTERS, 2019, 卷号: 14, 页码: 150-153
作者:
Nazir, Muhammad Tariq
;
Bao Toan Phung
;
Zhang, Yuanyuan
;
Li, Shengtao
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2019/11/19
nanocomposites
thermogravimetric analysis
BN
dielectric loss
dielectric losses
blending
EPDM composite samples
filled polymers
hot press application
high-voltage insulation
ethylene propylene diene monomer
nanoparticles
thermal analysis
broadband dielectric spectroscopy
hot pressing
wide band gap semiconductors
polymeric material
dielectric constant
thermal conductivity
dielectric properties
EPDM matrix
nanoboron nitride cofilled EPDM composites
melt-blending
electrical insulation applications
composite insulating materials
residual masses
nanocofilled contents
microcofilled contents
nanoBN particles
denser packing geometry
pyrolysis
boron compounds
thermal properties
microboron nitride cofilled EPDM composites
microBN particles
melt processing
initial degradation temperature
III-V semiconductors
permittivity
Point defects in group III nitrides: A comparative first-principles study
期刊论文
JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 125
作者:
Gao, Yinlu
;
Sun, Dan
;
Jiang, Xue
;
Zhao, Jijun
收藏
  |  
浏览/下载:81/0
  |  
提交时间:2019/12/02
Aluminum nitride
Binary alloys
Calculations
Density functional theory
Energy gap
Gallium nitride
III-V semiconductors
Nitrides
Point defects
Semiconductor devices
Semiconductor doping
Time varying systems, Defect configurations
Diffusion properties
Donor and acceptor
First-principles study
Migration barriers
Native point defects
Self-compensation effects
Wide-bandgap semiconductor devices, Wide band gap semiconductors
Mechanical and thermal properties of the coaxial carbon nanotube@boron nitride nanotube composite
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 卷号: 107, 页码: 182-186
作者:
He, Tiantian
;
Li, Ting
;
Huang, Zhengxing
;
Tang, Zhenan
;
Guan, Xiangyu
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/02
Boron nitride
Carbon nanotubes
Elastic moduli
III-V semiconductors
Molecular dynamics
Nanocomposites
Nitrides
Phonons
Thermal insulating materials
Yarn, Boron nitride nanotubes
Coupling strengths
High frequency phonons
High thermal conductivity
Mechanical and thermal properties
Molecular dynamics simulations
One-dimensional nanocomposites
Thermal interface materials, Thermal conductivity
Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors
期刊论文
NANOTECHNOLOGY, 2019, 卷号: 30
作者:
Post, L. C.[1]
;
Xu, T.[2]
;
Vergei, N. A. Franchina[3]
;
Tadjine, A.[4]
;
Lambert, Y.[5]
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2019/04/22
InGaAs quantum well
honeycomb semiconductor
dirac cone
electron beam lithography
band structure engineering
lattice disorder
Neutral oxygen-vacancy defect in cubic boron nitride: A plausible qubit candidate
期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114
作者:
Bian, Guodong
;
Yuan, Heng
;
Zhang, Ning
;
Xu, Lixia
;
Zhang, Jixing
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2019/12/30
Calculations
Cubic boron nitride
Ground state
III-V semiconductors
Oxygen
Quantum optics
Qubits
Computing applications
Cubic boron nitride (cBN)
First-principles calculation
Hyperfine interactions
Neutral oxygen vacancy
Oxygen vacancy defects
Quantum-information processing
Zero-field splittings
Oxygen vacancies
Thermal and nonthermal melting of III-V compound semiconductors
期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 99
作者:
Medvedev, Nikita
;
Fang, Zhaoji
;
Xia, Chenyi
;
Li, Zheng
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/30
Aluminum arsenide
Antimony compounds
Electrons
Free electron lasers
Gallium arsenide
Gallium phosphide
Melting
Semiconducting gallium arsenide
Born-Oppenheimer approximation
Disordered state
Electronic excitation
High density liquids
Non thermal effect
Non-Born Oppenheimer
Thermal phase transition
Tight binding methods
III-V semiconductors
Extracting more light for vertical emission: high power continuous wave operation of 1.3-m quantum-dot photonic-crystal surface-emitting laser based on a flat band
期刊论文
Light: Science and Applications, 2019, 卷号: 8, 期号: 1
作者:
H.-Y.Lu
;
S.-C.Tian
;
C.-Z.Tong
;
L.-J.Wang
;
J.-M.Rong
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2020/08/24
Photonic crystals,Arsenic compounds,Crystal structure,III-V semiconductors,Indium arsenide,Nanocrystals,Quantum dot lasers,Semiconductor quantum dots,Surface emitting lasers
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:
J.-M.Shang
;
J.Feng
;
C.-A.Yang
;
S.-W.Xie
;
Y.Zhang
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors
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