| Neutral oxygen-vacancy defect in cubic boron nitride: A plausible qubit candidate | |
| Bian, Guodong; Yuan, Heng; Zhang, Ning; Xu, Lixia; Zhang, Jixing; Fan, Pengcheng; Wang, Hailong; Zhang, Chen; Shan, Guangcun; Zhang, Qianfan | |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 2019 | |
| 卷号 | 114 |
| 关键词 | Calculations Cubic boron nitride Ground state III-V semiconductors Oxygen Quantum optics Qubits Computing applications Cubic boron nitride (cBN) First-principles calculation Hyperfine interactions Neutral oxygen vacancy Oxygen vacancy defects Quantum-information processing Zero-field splittings Oxygen vacancies |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.5083076 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; EI |
| WOS记录号 | WOS:000461512000022 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5921164 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Bian, Guodong,Yuan, Heng,Zhang, Ning,et al. Neutral oxygen-vacancy defect in cubic boron nitride: A plausible qubit candidate[J]. APPLIED PHYSICS LETTERS,2019,114. |
| APA | Bian, Guodong.,Yuan, Heng.,Zhang, Ning.,Xu, Lixia.,Zhang, Jixing.,...&Fang, Jiancheng.(2019).Neutral oxygen-vacancy defect in cubic boron nitride: A plausible qubit candidate.APPLIED PHYSICS LETTERS,114. |
| MLA | Bian, Guodong,et al."Neutral oxygen-vacancy defect in cubic boron nitride: A plausible qubit candidate".APPLIED PHYSICS LETTERS 114(2019). |
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