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山东大学 [9]
西安交通大学 [4]
西安理工大学 [3]
微电子研究所 [2]
华南理工大学 [1]
湖南大学 [1]
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期刊论文 [11]
会议论文 [9]
发表日期
2018 [20]
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Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2
期刊论文
IEEE Electron Device Letters, 2018
作者:
Yuanjie Lv
;
Xingye zhou
;
shibing Long
;
Xubo Song
;
Yuangang Wang
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2019/04/18
Research on Radiation-Induced Threshold Voltage Shifts in Power MOSFET Based on Charge-Pumping Method
会议论文
作者:
Ding Y(丁艳)
;
Wang LX(王立新)
;
Zhang YF(张彦飞)
;
Liu MX(刘梦新)
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/05/13
Temperature Dependence of Dynamic Performance Characterization of 1.2 kV SiC Power MOSFETs compared with Si IGBTs for Wide Temperature Applications
期刊论文
IEEE Transactions on Power Electronics, 2018
作者:
Qi, Jinwei
;
Yang, Xu
;
Li, Xin
;
Tian, Kai
;
Mao, Zhangsong
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/11/19
Cryogenic temperatures
Dynamic resistance
High-efficiency power conversions
High-frequency applications
Power conversion systems
SiC MOSFET
Switching characterization
Temperature applications
Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications
期刊论文
ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900
作者:
Zhu, Tianhua
;
Zhuo, Fang
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/11/19
high-current applications
wire bonding
power density
avalanche-suppressed method
gallium compounds
GaN
integral package
lead bonding
single gate driver
field effect transistor switches
MOSFET
DHEMT integrated cascode switch
high electron mobility transistors
paralleled depletion-mode high-electron-mobility transistors
wide band gap semiconductors
cascode transistors
silicon-MOSFET
Si
potential unbalanced current sharing
cost reduction
optimised symmetric configuration
high-current cascode gallium nitride switch
III-V semiconductors
semiconductor device packaging
Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module
会议论文
作者:
Wang, Jun
;
Burgos, Rolando
;
Boroyevich, Dushan
;
Liu, Zeng
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  |  
浏览/下载:10/0
  |  
提交时间:2019/11/26
switching-cycle control
smart gate driver
digital control system
Power electronics building block
SiC MOSFET
Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module
会议论文
作者:
Wang, Jun
;
Burgos, Rolando
;
Boroyevich, Dushan
;
Liu, Zeng
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
Auxiliary power supply
Design considerations
Gate drivers
H bridge circuits
Modular converters
Power Electronics Building Blocks
Si-CMOS
Switching cycles
High Dynamic Performance Solar Array Simulator Based on a SiC MOSFET Linear Power Stage
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 卷号: 33, 页码: 1682-1695
作者:
Jin, Shanshan[1]
;
Zhang, Donglai[1]
;
Bao, Zhiyun[2]
;
Liu, Xinjun[3]
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/04/22
Current-voltage characteristics
high dynamic performance
SiC MOSFET transistor
renewable energy sources
voltage-controlled linear current source
An Integrated Gate Driver with Active Delay Control Method for Series Connected SiC MOSFETs
期刊论文
2018 IEEE 19th Workshop on Control and Modeling for Power Electronics, COMPEL 2018, 2018
作者:
Wang, Panrui
;
Gao, Feng
;
Jing, Yang
;
Hao, Quanrui
;
Li, Kejun
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  |  
浏览/下载:9/0
  |  
提交时间:2019/12/11
delay control
series connected
SiC MOSFET
voltage balance
An Optimized Any-Cell-to-Any-Cell Equalizer Based on Coupled Half-bridge Converters for Series-Connected Battery Strings
期刊论文
IEEE Transactions on Power Electronics, 2018
作者:
Shang Y.
;
Cui N.
;
Zhang C.
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/11
Batteries
Computer architecture
electric vehicles
Equalizers
equalizers
half-bridge converters
Inductors
Li-ion batteries
Microprocessors
MOSFET
multi-winding transformers
Windings
Design of high-disturbance driver system for SiC high-power module
期刊论文
IFAC PAPERSONLINE, 2018, 卷号: 51, 期号: 31, 页码: 690-693
作者:
Zhu, Liangtao
;
Wang, Tao
;
Song, Jinqiu
;
Li, Bin
;
Zhang, Jianguo
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/12/11
MOSFET
SiC Power module
Anti-interference
Driver system
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