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科研机构
北京航空航天大学 [4]
西安交通大学 [3]
西安理工大学 [3]
大连理工大学 [1]
近代物理研究所 [1]
内容类型
会议论文 [12]
发表日期
2018 [12]
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发表日期:2018
内容类型:会议论文
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Microstructure damage in silicon carbide fiber induced by 246.8-MeV Ar-ion irradiation
会议论文
作者:
Zhang, Liqing
;
Zhang, Chonghong
;
Huang, Qing
;
Ding, Zhaonan
;
Yan, Tingxing
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2019/03/27
SiC fibers
Ar-ion irradiation
TEM
Raman scattering spectra
SEM
Effects of characteristic of green body on the microstructure and properties of reaction bonded silicon carbide
会议论文
作者:
Xu, Shao Chun
;
Wang, Zi Jing
;
Zhang, Ya Ming
;
Zhi, Qiang
;
Matsushita, Jun-Ichi
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/19
Carboxy-methyl cellulose
Different binders
Microstructure and properties
Optimum conditions
Reaction-bonded
Reaction-bonded silicon carbides
Sintering temperatures
Water-soluble binders
The preparation and properties of clay bonded silicon carbide by using silicon carbide dusting powder
会议论文
作者:
Xu, Shaochun
;
Wang, Zijing
;
Zhang, Yaming
;
Zhi, Qiang
;
Wang, Xudong
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/11/19
Ball-milling methods
Carbide refractories
Microstructure and mechanical properties
Optimum conditions
Planetary ball milling
Pressureless sintering process
Sintering additives
Sintering temperatures
Capacitance–Voltage Measurements and Bias Temperature Stress Induced Flatband Voltage Instability in 4H-SiC MOS Capacitors
会议论文
Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018)
作者:
Yang C(杨超)
;
Wang DJ(王德君)
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/02
Dynamic Performance of 4H-SiC Power MOSFETs and Si IGBTs over Wide Temperature Range
会议论文
作者:
Qi, Jinwei
;
Tian, Kai
;
Mao, Zhangsong
;
Yang, Song
;
Song, Wenjie
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
MOSFETs
dynamic on-resistance
silicon carbide (SiC)
cryogenic temperature
switching transient
An Active Gate Driver for Improving Switching Performance of SiC MOSFET
会议论文
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2018-01-01
作者:
Yang, Yuan
;
Wang, Yan
;
Wen, Yang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/20
Silicon Carbide (SiC) devices
overvoltage
switching losses
An active gate driver (AGD)
4H-SiC Light Triggered Thyristor with Gradually Doped Thin n-base
会议论文
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01
作者:
Wang, Xi
;
Pu, Hongbin
;
Liu, Qing
;
Hu, Dandan
;
Wang, Yafang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/20
silicon carbide
light triggered thyristor
gradually doped
thin n-base
Origin analysis and elimination of obtuse triangular defects in 4° off 4H-SiC epitaxy
会议论文
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Columbia, WA, United states, 2017-09-17
作者:
Mao, K.L.
;
Wang, Y.M.
;
Li, B.
;
Zhao, G.Y.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/20
Design of SiC-Based Single-Phase Quasi-Z-Source Inverter
会议论文
PROCEEDINGS 2018 IEEE 12TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG 2018), 2018-01-01
作者:
Liu, Yushan
;
Abu-Rub, Haitham
;
Wu, Yichang
;
Ghazi, Khalid Ahamed
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/30
Silicon carbide
single-phase inverter
quasi-Z-source inverter
switching frequency
power density
Development of Auto Infrared Photoelastic Microscope for Stress Measurement of Silicon
会议论文
Proceedings - 2018 19th International Conference on Electronic Packaging Technology, ICEPT 2018
作者:
Li, T.
;
Yao, R.
;
Yu, C.
;
Su, F.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Cracks
Elasticity
Electronics packaging
Light polarization
Microscopes
Optical devices
Silicon carbide
Silicon wafers
Stresses
Wafer bonding
Wide band gap semiconductors
Electronic Packaging
Heating platform
Phase difference
Quarter wave-plate
Si-based materials
Silicon-based materials
Stress birefringence
Temperature cycling tests
Three dimensional integrated circuits
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