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| Multiband k • p theory of monolayer XSe (X=In; Ga) 期刊论文 PHYSICAL REVIEW B, 2017, 卷号: 96, 期号: 15, 页码: 155430 作者: Ma Zhou; Rui Zhang; Jiangpeng Sun; Wen-Kai Lou; Dong Zhang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2018/06/01 |
| Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy 期刊论文 PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116 作者: Y. Jiang; S. Thapa; G. D. Sanders; C. J. Stanton; Q. Zhang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:40/0  |  提交时间:2018/06/01 |
| Rediscovering MP15 Family (M = Li; Na; and K) as an Anisotropic Layered Semiconducting Material 期刊论文 The Journal of Physical Chemistry Letters, 2017, 卷号: 9, 期号: 4, 页码: 732–738 作者: Yanhan Yang; Nan Tian; Yongzhe Zhang; Danmin Liu; Dong Zhang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2018/05/30 |
| Influence of disorder on magnetic properties and intrinsic anomalous hall effect in epitaxial Co2FeAl film 期刊论文 Solid State Communications, 2017, 卷号: 254, 页码: 48–51 作者: K.K. Meng; J. Miao; X.G. Xu; Y. Wu; J.H. Zhao
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:16/0  |  提交时间:2018/07/02 |
| Thickness dependence of magnetic anisotropy and intrinsic anomalous Hall effect in epitaxial Co2MnAl film 期刊论文 Physics Letters A, 2017, 卷号: 381, 页码: 1202–1206 作者: K.K.Meng; J.Miao; X.G.Xu; J.H.Zhao; Y.Jiang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:26/0  |  提交时间:2018/07/02 |
| Anomalous Hall effect in MnAl/W bilayers: Modification from strong spin Hall effect of W 期刊论文 Solid State Communications, 2017, 卷号: 255-256, 页码: 15–19 作者: K.K. Meng; J. Miao; X.G. Xu; Y. Wu; J.H. Zhao
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:15/0  |  提交时间:2018/07/02 |
| Enhanced spin-orbit torques in MnAl/Ta films with improving chemical ordering 期刊论文 Appl. Phys. Lett., 2017, 卷号: 110, 页码: 142401 作者: K. K. Meng; J. Miao; X. G. Xu; Y. Wu; X. P. Zhao
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:16/0  |  提交时间:2018/07/02 |
| 1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K 期刊论文 Appl. Phys. Lett., 2017, 卷号: 111, 页码: 182102 作者: Yongzhou Xue; Zesheng Chen; Haiqiao Ni; Zhichuan Niu; Desheng Jiang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:30/0  |  提交时间:2018/06/15 |