1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K

	1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K
	Yongzhou Xue; Zesheng Chen; Haiqiao Ni; Zhichuan Niu; Desheng Jiang; Xiuming Dou; Baoquan Sun
刊名	Appl. Phys. Lett.
	2017
卷号	111 页码:182102
学科主题	半导体物理
公开日期	2018-06-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28617]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Yongzhou Xue,Zesheng Chen,Haiqiao Ni,et al. 1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K[J]. Appl. Phys. Lett.,2017,111:182102.
APA	Yongzhou Xue.,Zesheng Chen.,Haiqiao Ni.,Zhichuan Niu.,Desheng Jiang.,...&Baoquan Sun.(2017).1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K.Appl. Phys. Lett.,111,182102.
MLA	Yongzhou Xue,et al."1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K".Appl. Phys. Lett. 111(2017):182102.