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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2015     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process 期刊论文 ieee electron device letters, 2015 Xiao, Xiang; Shao, Yang; He, Xin; Deng, Wei; Zhang, Letao; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/11 Amorphous indium gallium zinc oxide (a-IGZO)  thin-film transistors (TFTs)  back channel anodization (BCA)  low temperature   Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Liu, Xiang; Wang, Lisa Ling; Hu, Hehe; Lu, Xinhong; Wang, Ke; Wang, Gang; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 a-IGZO TFTs  back-channel-etch (BCE)  plasma treatment  threshold voltage shift  THRESHOLD VOLTAGE  SHIFT  OXIDE  GATE   Comparative study of a-IGZO TFTs with direct current and radio frequency sputtered channel layers 期刊论文 JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2015 Deng, Wei; Xiao, Xiang; He, Xin; Lee, Chia-Yu; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 amorphous indium-gallium-zinc oxide (a-IGZO)  RF sputtering  DC sputtering  oxygen vacancy  stability  THIN-FILM TRANSISTORS  TRANSPORT   Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Shao, Yang; Xiao, Xiang; He, Xin; Deng, Wei; Zhang, Shengdong 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Amorphous indium-gallium-zinc oxide (a-IGZO)  anodized HfO2  high-k  low voltage  thin-film transistors (TFTs)  OXIDE  TEMPERATURE  ALUMINUM