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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2015    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling 期刊论文 science china information sciences, 2015 Wang Chao; Wu ChunLei; Wang JiaXin; Huang QianQian; Huang Ru 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 tunneling field-effect transistor  current model  surface potential  drain voltage  tunneling width   Line-edge roughness induced single event transient variation in SOI FinFETs 期刊论文 半导体学报（英文版）, 2015 Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 heavy ion irradiation single event transient variation line-edge roughness SOI FinFET  heavy ion irradiation  single event transient  variation  line-edge roughness  SOI  FinFET   Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Wang, Yijiao; Al-Ameri, Talib; Wang, Xingsheng; Georgiev, Vihar P.; Towie, Ewan; Amoroso, Salvatore Maria; Brown, Andrew R.; Cheng, Binjie; Reid, David; Riddet, Craig; Shifren, Lucian; Sinha, Saurabh; Yeric, Greg; Aitken, Robert; Liu, Xiaoyan; Kang, Jinfeng; Asenov, Asen 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 CMOS  electrostatics  nanowire transistors (NWs)  performance  quantum effects  TCAD  STATISTICAL VARIABILITY  INVERSION-LAYERS  GATE  CMOS  GENERATION  ELECTRON  DENSITY  FINFETS  DEVICES  MOSFETS   Comparative study of silicon nanowire transistors with triangular-shaped cross sections 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Zhang, Yi-Bo; Sun, Lei; Xu, Hao; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 SCHOTTKY-BARRIER SOURCE/DRAIN  MOSFET  PERFORMANCE  SIMULATION  FINFETS  LEAKAGE   Comparative study of silicon nanowire transistors with triangular-shaped cross sections 其他 2015-01-01 Zhang, Yi-Bo; Sun, Lei; Xu, Hao; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/04 SCHOTTKY-BARRIER SOURCE/DRAIN  MOSFET  PERFORMANCE  SIMULATION  FINFETS  LEAKAGE