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Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric 期刊论文
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,, 2014
作者:  Liu HG(刘洪刚);  Chang HD(常虎东);  Zhao W(赵威);  Sun B(孙兵);  Gong ZJ(龚著婧)
收藏  |  浏览/下载:9/0  |  提交时间:2015/04/15
High-k/Ge interface passivation using cycling ozone oxidation 期刊论文
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,, 2014
作者:  Wang SK(王盛凯);  Han L(韩乐);  Sun B(孙兵);  Chang HD(常虎东);  Zhao W(赵威)
收藏  |  浏览/下载:4/0  |  提交时间:2015/04/16
High-frequency Performance In0.49Ga0.51P/In0.4Ga0.6As MOSFET 期刊论文
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014, 2014
作者:  Liu GM(刘桂明);  Zhou JH(周佳辉);  Liu HG(刘洪刚);  Zhou SH(周生辉);  Chang HD(常虎东)
收藏  |  浏览/下载:6/0  |  提交时间:2015/04/16
Fluorinated Al2O3 Gate Dielectric Engineering on GaSb MOS Devices 期刊论文
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,, 2014
作者:  Ceng ZH(曾振华);  Sun B(孙兵);  Liu HG(刘洪刚);  Wang SK(王盛凯);  Zhou JH(周佳辉)
收藏  |  浏览/下载:3/0  |  提交时间:2015/04/16
InGaSb Buried-Channel pMOSFET Fabricated by Using Digital Etch Technique 会议论文
作者:  Sun B(孙兵);  Ceng ZH(曾振华);  Chang HD(常虎东);  Wang SK(王盛凯);  Liu HG(刘洪刚)
收藏  |  浏览/下载:8/0  |  提交时间:2015/05/07


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