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| Si-substrate-based High Mobility Ge-pMOSFETs Using Ozone Passivated Al2O3/GeOx Gate Dielectric 期刊论文 Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,, 2014 作者: Liu HG(刘洪刚); Chang HD(常虎东); Zhao W(赵威); Sun B(孙兵); Gong ZJ(龚著婧)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:9/0  |  提交时间:2015/04/15 |
| High-k/Ge interface passivation using cycling ozone oxidation 期刊论文 Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,, 2014 作者: Wang SK(王盛凯); Han L(韩乐); Sun B(孙兵); Chang HD(常虎东); Zhao W(赵威)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:4/0  |  提交时间:2015/04/16 |
| High-frequency Performance In0.49Ga0.51P/In0.4Ga0.6As MOSFET 期刊论文 Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014, 2014 作者: Liu GM(刘桂明); Zhou JH(周佳辉); Liu HG(刘洪刚); Zhou SH(周生辉); Chang HD(常虎东)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:6/0  |  提交时间:2015/04/16 |
| Fluorinated Al2O3 Gate Dielectric Engineering on GaSb MOS Devices 期刊论文 Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba, 2014,, 2014 作者: Ceng ZH(曾振华); Sun B(孙兵); Liu HG(刘洪刚); Wang SK(王盛凯); Zhou JH(周佳辉)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:3/0  |  提交时间:2015/04/16 |
| InGaSb Buried-Channel pMOSFET Fabricated by Using Digital Etch Technique 会议论文 作者: Sun B(孙兵); Ceng ZH(曾振华); Chang HD(常虎东); Wang SK(王盛凯); Liu HG(刘洪刚)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:8/0  |  提交时间:2015/05/07 |