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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2013    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Oscillation characteristics of electrically-pumped vertical external cavity surface emitting lasers 期刊论文 Journal of Infrared and Millimeter Waves, 2013, 卷号: 32, 期号: 4 作者:  Zhang X.;  Qin L. 收藏  |  浏览/下载：8/0  |  提交时间：2014/05/14 Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks 期刊论文 Laser Physics Letters, 2013, 卷号: 10, 期号: 4 Zhang J.; Ning Y. Q.; Zeng Y. G.; Zhang J. W.; Zhang J. L.; Fu X. H.; Tong C. Z.; Wang L. J. 收藏  |  浏览/下载：25/0  |  提交时间：2014/05/14 The improved output performance of a broad-area vertical-cavity surface-emitting laser with an optimized electrode diameter 期刊论文 Chinese Physics B, 2013, 卷号: 22, 期号: 6 作者:  Qin L.;  Zhang X. 收藏  |  浏览/下载：13/0  |  提交时间：2014/05/14 Direct integration of aspherical microlens on vertical-cavity surface emitting laser emitting surface for beam shaping 期刊论文 Optics Communications, 2013, 期号: 300 作者:  Qin L.;  Zhang X. 收藏  |  浏览/下载：15/0  |  提交时间：2014/05/14 Structural improvement of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) 会议论文 Asia Pacific Conference on Optics Manufacture 2012, APCOM 2012, August 26, 2012 - August 28, 2012, Changchun, China 作者:  Qin L. 收藏  |  浏览/下载：10/0  |  提交时间：2014/05/15 Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China Liang X.; Wang L.; Ning Y.; Liu Y. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method  self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode  the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1  2 and 3) in one period  QW depth  barrier width  the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis  we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device  the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications  Switzerland.   Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) 会议论文 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China Liang X.; Wang L.; Ning Y.; Liu Y. 收藏  |  浏览/下载：13/0  |  提交时间：2014/05/15