QQ客服 官方微博 反馈留言

浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2013    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The synthesis, structures and magnetic properties of polynuclear Ru-III-3d (3d = Mn-II/III, Ni-II, Cu-II) compounds based on [Ru-III(Q)(2)(CN)(2)](-) 期刊论文 dalton transactions, 2013 Xiang, Jing; Jia, Li-Hui; Wang, Bing-Wu; Yiu, Shek-Man; Peng, Shie-Ming; Wong, Wai-Yeung; Gao, Song; Lau, Tai-Chu 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 SINGLE-MOLECULE MAGNET  MN-2(H2O)(5)MO(CN)(7)CENTER-DOT-4H(2)O ALPHA-PHASE  BRIDGED BIMETALLIC COMPOUND  METAL-CYANIDE CUBES  CRYSTAL-STRUCTURE  BUILDING-BLOCK  COORDINATION NETWORKS  TETRAHEDRAL CORNERS  SPIN REORIENTATION  RE-II   Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method 期刊论文 ieee电子器件汇刊, 2013 Jiang, Xiaobo; Wang, Runsheng; Yu, Tao; Chen, Jiang; Huang, Ru 收藏  |  浏览/下载：11/0  |  提交时间：2015/11/10 Auto-correlation function  cross-correlation  line-edge-roughness (LER)  line-width-roughness (LWR)  modeling  variability  INTRINSIC PARAMETER FLUCTUATIONS  VARIABILITY  MOSFETS  DECANANOMETER  PERFORMANCE   Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability 期刊论文 ieee电子器件汇刊, 2013 Wang, Runsheng; Jiang, Xiaobo; Yu, Tao; Fan, Jiewen; Chen, Jiang; Pan, David Z.; Huang, Ru 收藏  |  浏览/下载：7/0  |  提交时间：2015/11/10 FinFET  line-edge roughness (LER)  line-width roughness (LWR)  nanowire  variability  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  MOSFETS  DECANANOMETER  NANOWIRES  OXIDATION  NOISE