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p-ZnO和n-GaN组合的ZnO基端发射激光器及制备方法 专利
专利号: CN102263369A, 申请日期: 2011-11-30, 公开日期: 2011-11-30
作者:  杜国同;  夏晓川;  赵旺;  梁红伟;  张宝林
收藏  |  浏览/下载:18/0  |  提交时间:2020/01/18
Conduction and valence band discontinuities in some new semiconductor heterojunctions 期刊论文
Journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11, 页码: 9368-9383
作者:  Zhu, Qinsheng;  Wu, Ju;  Li, Chengming;  Wang, Zhanguo
收藏  |  浏览/下载:13/0  |  提交时间:2019/05/12
Ferromagnetic nature of (ga, cr)as epilayers revealed by magnetic circular dichroism 期刊论文
Solid state communications, 2011, 卷号: 151, 期号: 6, 页码: 456-459
作者:  Wu, H.;  Gan, H. D.;  Zheng, H. Z.;  Lu, J.;  Zhu, H.
收藏  |  浏览/下载:29/0  |  提交时间:2019/05/12
ZnO和GaN组合ZnO基端面发射激光器及其制备方法 专利
专利号: CN101976800A, 申请日期: 2011-02-16, 公开日期: 2011-02-16
作者:  杜国同;  夏晓川;  赵旺;  梁红伟;  张宝林
收藏  |  浏览/下载:3/0  |  提交时间:2020/01/18
Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 卷号: 269, 期号: 3, 页码: 396-399
作者:  Han, L. H.;  Zhang, L. Q.;  Zhang, C. H.;  Yang, Y. T.;  Jin, Y. F.
收藏  |  浏览/下载:15/0  |  提交时间:2015/10/15
Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 12
Lv, YJ; Lin, ZJ; Meng, LG; Yu, YX; Luan, CB; Cao, ZF; Chen, H; Sun, BQ; Wang, ZG
收藏  |  浏览/下载:16/0  |  提交时间:2013/09/17
Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism 期刊论文
solid state communications, 2011, 卷号: 151, 期号: 6, 页码: 456-459
Wu H; Gan HD; Zheng HZ; Lu J; Zhu H; Ji Y; Li GR; Zhao JH
收藏  |  浏览/下载:65/5  |  提交时间:2011/07/05


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