QQ客服 官方微博 反馈留言

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2011    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Optically induced current oscillation in a modulation-doped field-effect transistor embedded with inas quantum dots 期刊论文 Physica e-low-dimensional systems & nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689 作者:  Li, Y. Q.;  Wang, X. D.;  Xu, X. N.;  Liu, W.;  Yang, F. H. 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Quantum dots  Modulation-doped  Field-effect transistors  Output characteristics   Size-dependent electroluminescence from si quantum dots embedded in amorphous sic matrix 期刊论文 Journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 6 作者:  Rui, Yunjun;  Li, Shuxin;  Xu, Jun;  Song, Chao;  Jiang, Xiaofan 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文 Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure 期刊论文 European physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 5 作者:  Bi, Y.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Peng, E. C. 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Growth simulations of self-assembled nanowires on stepped substrates 期刊论文 Ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965 作者:  Liang, Song;  Kong, Duanhua;  Zhu, Hongliang;  Wang, Wei 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Kinetic monte carlo (kmc) simulations  Self-assembled nanowires  Stepped substrates   Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文 Journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: 10 作者:  Jiang, Xiang-Wei;  Li, Shu-Shen;  Xia, Jian-Bai;  Wang, Lin-Wang 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512 Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H 收藏  |  浏览/下载：65/6  |  提交时间：2011/07/05 FIELD-EFFECT TRANSISTORS  GAN  DEPENDENCE  CONTACTS  STATES  NI   Dynamics of dense spin ensemble excited in a barrier layer and detected in a well 期刊论文 science china-physics mechanics & astronomy, 2011, 卷号: 54, 期号: 6, 页码: 1108-1111 作者:  Zhu H;  Wang LG 收藏  |  浏览/下载：64/0  |  提交时间：2011/07/05 spin polarized transport  optical orientation  dense spin relaxation  quantum well  TRANSPORT   Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503 作者:  Jiang XW 收藏  |  浏览/下载：51/2  |  提交时间：2011/07/05 FIELD-EFFECT TRANSISTORS  SEMICONDUCTOR-DEVICES  SILICON DEVICES  MONTE-CARLO  MOSFETS  NANOTRANSISTORS  APPROXIMATION  EQUATIONS  DESIGN  MODELS   Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：58/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN