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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2010     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(n-vinylcarbazole) composites 期刊论文 Journal of applied physics, 2010, 卷号: 108, 期号: 9, 页码: 5 作者:  Tang, Aiwei;  Qu, Shengchun;  Hou, Yanbing;  Teng, Feng;  Tan, Hairen 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Photoswitches and memories assembled by electrospinning aluminum-doped zinc oxide single nanowires 期刊论文 2010, 2010 Lin, Dandan; Wu, Hui; Pan, Wei 收藏  |  浏览/下载：3/0 Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications 外文期刊 2010 作者:  Fu D, Xie D, Zhang CH, et al. 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/26 Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 9, 页码: art. no. 094320 Tang AW (Tang Aiwei); Qu SC (Qu Shengchun); Hou YB (Hou Yanbing); Teng F (Teng Feng); Tan HR (Tan Hairen); Liu J (Liu Jie); Zhang XW (Zhang Xingwang); Wang YS (Wang Yongsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：31/0  |  提交时间：2010/12/12 THIN-FILM  OPTICAL-PROPERTIES  RAMAN-SCATTERING  MEMORY DEVICES  NANOPARTICLES  NANOCRYSTALS  MOLECULE  CLUSTERS   Bistable resistance switching of Cu/Cu:HfO2/Pt for nonvolatile memory application 会议论文 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, November 1, 2010 - November 4, 2010 作者:  Wang, Yan;  Long, Shi-Bing;  Lv, Hang-Bing;  Liu, Qi;  Wang, Qin 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/20 Switching  Doping (additives)  Hafnium  Hafnium oxides  Integrated circuits  Oxides  Platinum  Random access storage  Switching systems  Bistable resistance  Cu-doping  DC electrical  Fast operation  Metallic filaments  Non-volatile memories  Non-volatile memory application  Resistance switching  Resistive random access memory  Resistive switching  Stable state  Temperature test