Bistable resistance switching of Cu/Cu:HfO2/Pt for nonvolatile memory application

	Bistable resistance switching of Cu/Cu:HfO2/Pt for nonvolatile memory application
	Wang, Yan; Long, Shi-Bing; Lv, Hang-Bing; Liu, Qi; Wang, Qin; Li, Ying-Tao; Zhang, Sen; Lian, Wen-Tai; Yang, Jian-Hong; Liu, Ming
	2010
会议名称	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
会议日期	November 1, 2010 - November 4, 2010
会议地点	Shanghai, China
关键词	Switching Doping (additives) Hafnium Hafnium oxides Integrated circuits Oxides Platinum Random access storage Switching systems Bistable resistance Cu-doping DC electrical Fast operation Metallic filaments Non-volatile memories Non-volatile memory application Resistance switching Resistive random access memory Resistive switching Stable state Temperature test
页码	1118-1120
通讯作者	Wang, Y.
会议录	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
会议录出版地	Piscataway
学科主题	Computer Theory, Includes Formal Logic, Automata Theory, Switching Theory, Programming Theory; Chemical Products Generally
语种	英语
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/184808]
专题	物理科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Wang, Yan,Long, Shi-Bing,Lv, Hang-Bing,et al. Bistable resistance switching of Cu/Cu:HfO2/Pt for nonvolatile memory application[C]. 见:2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology. Shanghai, China. November 1, 2010 - November 4, 2010.