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浏览/检索结果: 共105条，第1-10条 帮助 限定条件 发表日期：2010    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A photovoltaic inas quantum-dot infrared photodetector 期刊论文 Chinese physics letters, 2010, 卷号: 27, 期号: 4, 页码: 4 作者:  Tang Guang-Hua;  Xu Bo;  Jiang Li-Wen;  Kong Jin-Xia;  Kong Ning 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038501 Kong N (Kong Ning); Liu JQ (Liu Jun-Qi); Li L (Li Lu); Liu FQ (Liu Feng-Qi); Wang LJ (Wang Li-Jun); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：197/33  |  提交时间：2010/04/22 WELL INFRARED PHOTODETECTORS  LASER   Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102 Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：141/24  |  提交时间：2010/09/07 quantum dot  symmetrized Hamiltonian  Burt-Foreman Hamiltonian  finite element method  spurious solutions  EFFECTIVE-MASS APPROXIMATION  P THEORY   High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：151/30  |  提交时间：2010/04/13 THRESHOLD CURRENT  ROOM-TEMPERATURE  DEPENDENCE  PHOTOLUMINESCENCE   Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 10, 页码: art. no. 104510 Xu XQ (Xu Xiaoqing); Liu XL (Liu Xianglin); Guo Y (Guo Yan); Wang J (Wang Jun); Song HP (Song Huaping); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：184/49  |  提交时间：2010/06/18 PHOTOEMISSION-SPECTROSCOPY  PRECISE DETERMINATION  GA-FACE  SURFACE  ALN  HETEROJUNCTIONS  DISCONTINUITY  LEVEL   Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：224/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 6, 页码: art. no. 067302 Guo Y (Guo Yan); Liu XL (Liu Xiang-Lin); Song HP (Song Hua-Ping); Yang AL (Yang An-Li); Zheng GL (Zheng Gao-Lin); Wei HY (Wei Hong-Yuan); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：205/46  |  提交时间：2010/07/05 GE  GAAS  GROWTH   Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512 Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.) 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/14 CHEMICAL-VAPOR-DEPOSITION  INAS QUANTUM DOTS  MOLECULAR-BEAM EPITAXY  GAAS  SURFACES  ISLANDS  GROWTH  FABRICATION  MIGRATION  ARRAYS   Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043702 Li GD (Li Guodong); Yin H (Yin Hong); Zhu QS (Zhu Qinsheng); Sakaki H (Sakaki Hiroyuki); Jiang C (Jiang Chao) 收藏  |  浏览/下载：204/41  |  提交时间：2010/10/11 PHOTOLUMINESCENCE  HETEROJUNCTIONS  SPECTROSCOPY  SYSTEMS  PHYSICS   Design and Characterization of Evanescently Coupled Uni-Traveling Carrier Photodiodes with a Multimode Diluted Waveguide Structure 期刊论文 chinese physics letters, 27 (2): art. no. 028501 feb 2010, 2010, 卷号: 27, 期号: 2, 页码: art. no. 028501 Zhang YX (Zhang Yun-Xiao); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：196/47  |  提交时间：2010/04/13 I-N PHOTODIODE  HIGH RESPONSIVITY  HIGH-SPEED  OPTIMIZATION  FABRICATION