| A photovoltaic inas quantum-dot infrared photodetector | |
| Tang Guang-Hua; Xu Bo; Jiang Li-Wen; Kong Jin-Xia; Kong Ning; Liang De-Chun; Liang Ping; Ye Xiao-Ling; Jin Peng; Liu Feng-Qi | |
| 刊名 | Chinese physics letters
 |
| 2010-04-01 | |
| 卷号 | 27期号:4页码:4 |
| ISSN号 | 0256-307X |
| DOI | 10.1088/0256-307x/27/4/047801 |
| 通讯作者 | Tang guang-hua(tghsugar@semi.ac.cn) |
| 英文摘要 | A photovoltaic quantum dot infrared photodetector with inas/gaas/algaas structures is reported. the detector is sensitive to normal incident light. at zero bias and 78 k, a clear spectral response in the range of 2 -7 mu m has been obtained with peaks at 3.1, 4.8 and 5.7 mu m. the bandgap energies of gaas and al(0.2)ga(0.8)as at 78k are calculated and the energy diagram of the transitions in the quantum-dot infrared photodetector (qdip) is given out. the photocurrent signals can be detected up to 110 k, which is state-of-the-art for photovoltaic qdip. the photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure. |
| WOS关键词 | MU-M ; TEMPERATURE ; DETECTORS ; OPERATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000276203700058 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2428064 |
| 专题 | 半导体研究所 |
| 通讯作者 | Tang Guang-Hua |
| 作者单位 | Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang Guang-Hua,Xu Bo,Jiang Li-Wen,et al. A photovoltaic inas quantum-dot infrared photodetector[J]. Chinese physics letters,2010,27(4):4. |
| APA | Tang Guang-Hua.,Xu Bo.,Jiang Li-Wen.,Kong Jin-Xia.,Kong Ning.,...&Wang Zhan-Guo.(2010).A photovoltaic inas quantum-dot infrared photodetector.Chinese physics letters,27(4),4. |
| MLA | Tang Guang-Hua,et al."A photovoltaic inas quantum-dot infrared photodetector".Chinese physics letters 27.4(2010):4. |
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