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浏览/检索结果: 共17条，第1-10条 帮助 限定条件 发表日期：2009    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Localized-surface-plasmon enhanced the 357 nm forward emission from znmgo films capped by pt nanoparticles 期刊论文 Nanoscale research letters, 2009, 卷号: 4, 期号: 10, 页码: 1121-1125 作者:  You, J. B.;  Zhang, X. W.;  Dong, J. J.;  Song, X. M.;  Yin, Z. G. 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Znmgo films  Photoluminescence  Localized surface plasmon  Nanoparticles   Lattice polarity detection of inn by circular photogalvanic effect 期刊论文 Applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: 3 作者:  Zhang, Q.;  Wang, X. Q.;  He, X. W.;  Yin, C. M.;  Xu, F. J. 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Iii-v semiconductors  Indium compounds  Nondestructive testing  Photoconductivity  Radiation effects  Semiconductor thin films  Wide band gap semiconductors   Enhancement of field emission of the zno film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文 Applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: 3 作者:  You, J. B.;  Zhang, X. W.;  Cai, P. F.;  Dong, J. J.;  Gao, Y. 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Atomic force microscopy  Field emission  Hydrogen  Ii-vi semiconductors  Plasma materials processing  Sputter deposition  Wide band gap semiconductors  Work function  Zinc compounds   Measurement of polar c-plane and nonpolar a-plane inn/zno heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文 Applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: 3 作者:  Yang, A. L.;  Song, H. P.;  Wei, H. Y.;  Liu, X. L.;  Wang, J. 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Conduction bands  Iii-v semiconductors  Ii-vi semiconductors  Indium compounds  Interface states  Polarisation  Semiconductor heterojunctions  Valence bands  Wide band gap semiconductors  X-ray photoelectron spectra  Zinc compounds   Enhancement of conductivity and transmittance of zno films by post hydrogen plasma treatment 期刊论文 Journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: 6 作者:  Cai, P. F.;  You, J. B.;  Zhang, X. W.;  Dong, J. J.;  Yang, X. L. 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Annealing  Carrier density  Carrier mobility  Diffusion  Electrical conductivity  Electrical resistivity  Hydrogen  Ii-vi semiconductors  Impurity states  Interstitials  Light transmission  Plasma materials processing  Semiconductor thin films  Sputter deposition  Vacancies (crystal)  Visible spectra  Wide band gap semiconductors  Zinc compounds   Dislocation core effect scattering in a quasitriangle potential well 期刊论文 Applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: 3 作者:  Xu, Xiaoqing;  Liu, Xianglin;  Yang, Shaoyan;  Liu, Jianming;  Wei, Hongyuan 收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12 Aluminium compounds  Carrier density  Carrier mobility  Dislocation density  Dislocation scattering  Gallium compounds  Iii-v semiconductors  Semiconductor heterojunctions  Wide band gap semiconductors   Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文 Applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: 3 作者:  Yang, A. L.;  Song, H. P.;  Liu, X. L.;  Wei, H. Y.;  Guo, Y. 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Aluminium compounds  Conduction bands  Energy gap  High electron mobility transistors  Iii-v semiconductors  Magnesium compounds  Passivation  Semiconductor heterojunctions  Valence bands  Wide band gap semiconductors  X-ray photoelectron spectra   Design of narrow-gap tio2: a passivated codoping approach for enhanced photoelectrochemical activity 期刊论文 Physical review letters, 2009, 卷号: 102, 期号: 3, 页码: 4 作者:  Gai, Yanqin;  Li, Jingbo;  Li, Shu-Shen;  Xia, Jian-Bai;  Wei, Su-Huai 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Design of Narrow-Gap TiO2: A Passivated Codoping Approach for Enhanced Photoelectrochemical Activity 期刊论文 physical review letters, 2009, 卷号: 102, 期号: 3, 页码: art. no. 036402 作者:  Li JB 收藏  |  浏览/下载：187/43  |  提交时间：2010/03/08 AUGMENTED-WAVE METHOD  TITANIUM-DIOXIDE  WATER  ANATASE  PHOTOCATALYSIS  OXIDATION   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：71/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds