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	Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy
	Yang, A. L.; Song, H. P.; Liu, X. L.; Wei, H. Y.; Guo, Y.; Zheng, G. L.; Jiao, C. M.; Yang, S. Y.; Zhu, Q. S.; Wang, Z. G.
刊名	Applied physics letters
	2009-02-02
卷号	94期号:5页码:3
关键词	Aluminium compounds Conduction bands Energy gap High electron mobility transistors Iii-v semiconductors Magnesium compounds Passivation Semiconductor heterojunctions Valence bands Wide band gap semiconductors X-ray photoelectron spectra
ISSN号	0003-6951
DOI	10.1063/1.3075060
通讯作者	Yang, a. l.(alyang@semi.ac.cn)
英文摘要	Mgo is a promising gate dielectric and surface passivation film for gan/algan transistors, but little is known of the band offsets in the mgo/aln system. x-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (delta e(v)) of mgo/aln heterostructures. a value of delta e(v)=0.22 +/- 0.08 ev was obtained. given the experimental band gap of 7.83 ev for mgo, a type-i heterojunction with a conduction band offset of similar to 1.45 ev is found. the accurate determination of the valence and conduction band offsets is important for use of iii-n alloys based electronic devices.
WOS关键词	ALGAN/GAN HEMTS ; SURFACE PASSIVATION ; OXIDE ; TRANSISTORS ; SEMICONDUCTORS ; SC2O3 ; POWER ; ALN ; GAN
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000263167000028
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427723
专题	半导体研究所
通讯作者	Yang, A. L.
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Yang, A. L.,Song, H. P.,Liu, X. L.,et al. Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy[J]. Applied physics letters,2009,94(5):3.
APA	Yang, A. L..,Song, H. P..,Liu, X. L..,Wei, H. Y..,Guo, Y..,...&Wang, Z. G..(2009).Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy.Applied physics letters,94(5),3.
MLA	Yang, A. L.,et al."Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy".Applied physics letters 94.5(2009):3.

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