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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2007    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839 Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 2DEG   The correlation between preferred orientation and performance of ITO thin films 期刊论文 journal of materials science-materials in electronics, 2007, 卷号: 18 suppl.1, 期号: 0, 页码: s411-s414 Chen Y (Chen Yao); Zhou YQ (Zhou Yuqin); Zhang QF (Zhang Qunfang); Zhu MF (Zhu Meifang); Liu FZ (Liu Fengzhen) 收藏  |  浏览/下载：27/0  |  提交时间：2010/03/29 ELECTRICAL-PROPERTIES   Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film 期刊论文 materials letters, 2007, 卷号: 61, 期号: 18, 页码: 3882-3885 作者:  Wei TB;  Duan RF 收藏  |  浏览/下载：20/0  |  提交时间：2010/03/29 GaN   Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：103/26  |  提交时间：2010/03/29 homoepitaxy  4H-SiC  multi-epilayer  UV detection  p(+)-pi-n(-)  ULTRAVIOLET PHOTODETECTOR  EPITAXIAL-GROWTH   Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer 期刊论文 applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428 作者:  Duan RF;  Wei TB 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 GaN