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Band gap renormalization and carrier localization effects in ingan/gan quantum-wells light emitting diodes with si doped barriers 期刊论文
Applied physics letters, 2006, 卷号: 88, 期号: 4, 页码: 3
作者:  Wang, YJ;  Xu, SJ;  Li, Q;  Zhao, DG;  Yang, H
收藏  |  浏览/下载:12/0  |  提交时间:2019/05/12
Potential frequency bandwidth estimation of TO packaging techniques for photodiode modules 期刊论文
optical and quantum electronics, 2006, 卷号: 38, 期号: 8, 页码: 675-682
Zhang SJ (Zhang S. J.); Zhu NH (Zhu N. H.); Liu Y (Liu Y.); Xie L (Xie L.)
收藏  |  浏览/下载:62/0  |  提交时间:2010/04/11
Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 4, 页码: art.no.041903
作者:  Zhao DG
收藏  |  浏览/下载:40/0  |  提交时间:2010/04/11


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