Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers

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	Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers
	Zhao DG
刊名	applied physics letters
	2006
卷号	88 期号:4 页码:art.no.041903
关键词	PHOTOLUMINESCENCE LUMINESCENCE
ISSN号	0003-6951
通讯作者	xu, sj, univ hong kong, dept phys, pokfulam rd, hong kong, hong kong, peoples r china. e-mail: sjxu@hkucc.hku.hk
中文摘要	the optical properties of two kinds of ingan/gan quantum-wells light emitting diodes, one of which was doped with si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. the results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with si doped barriers. it is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the si doped ones exhibit a well exponential time evolution. a new model developed by o. rubel, s. d. baranovskii, k. hantke, j. d. heber, j. koch, p. thomas, j. m. marshall, w. stolz, and w. h. ruhle [j. optoelectron. adv. mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. it is found that the si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in ingan/gan layered heterostructures. (c) 2006 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10878]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers[J]. applied physics letters,2006,88(4):art.no.041903.
APA	Zhao DG.(2006).Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers.applied physics letters,88(4),art.no.041903.
MLA	Zhao DG."Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers".applied physics letters 88.4(2006):art.no.041903.