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	半導体レーザ素子およびその製造方法
	細井 洋治; 小林 正男; 的場 昭大; 坪田 孝志
	1998-11-06
著作权人	沖電気工業株式会社
专利号	JP2849423B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ素子およびその製造方法
英文摘要	PURPOSE:To prevent a leak path and to obtain a high optical output by a method wherein impurities are diffused to a stripe on a current-blocking layer formed on a semiconductor substrate, a current passage is formed and a diffraction grating is formed in the direction which is perpendicular to the current passage. CONSTITUTION:A current-blocking layer 22 using a reverse bias of semiinsulating InP or a semiinsulating semiconductor is grown epitaxially on a P-InP substrate 2 Then, an oxide film 23 is formed on the current-blocking layer 22; after that, a stripe 24 is formed in the reverse mesa direction. After that, impurities are diffused to the stripe 24; a current passage 25 is formed. Then, the oxide film 23 is removed; after that, a diffraction grating 26 is formed in the direction which is perpendicular to the current passage 25. After the diffraction grating 26 is formed, a P-InGaAsP guide layer 27, a P-InGaAsP active layer 28, an n-InGaAsP anti-meltback layer 29, an n-InP clad layer 30 and an n-InGaASP contact layer 31 are crystal-grown sequentially to form a crystal layer 34. Lastly, a P-side electrode 32 and an n-side electrode 33 are formed.
公开日期	1999-01-20
申请日期	1990-01-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84614]
专题	半导体激光器专利数据库
作者单位	沖電気工業株式会社
推荐引用方式 GB/T 7714	細井 洋治,小林 正男,的場 昭大,等. 半導体レーザ素子およびその製造方法. JP2849423B2. 1998-11-06.

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