QQ客服 官方微博 反馈留言

	Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE
	Qi, Ming; Luo, Jinsheng; Shirakashi, J.; Yamada, T.; Nozaki, S.; Tadahashi, K.; Kashima, H.; Tokumitsu, E.; Konagai, M.
刊名	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
	1993
卷号	14期号:8页码:462-467
ISSN号	0253-4177
URL标识	查看原文
收录类别	SCOPUS ; EI ; CSCD
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6648986
专题	西安交通大学
推荐引用方式 GB/T 7714	Qi, Ming,Luo, Jinsheng,Shirakashi, J.,et al. Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,1993,14(8):462-467.
APA	Qi, Ming.,Luo, Jinsheng.,Shirakashi, J..,Yamada, T..,Nozaki, S..,...&Konagai, M..(1993).Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,14(8),462-467.
MLA	Qi, Ming,et al."Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 14.8(1993):462-467.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。