Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE | |
Qi, Ming; Luo, Jinsheng; Shirakashi, J.; Yamada, T.; Nozaki, S.; Tadahashi, K.; Kashima, H.; Tokumitsu, E.; Konagai, M. | |
刊名 | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
1993 | |
卷号 | 14期号:8页码:462-467 |
ISSN号 | 0253-4177 |
URL标识 | 查看原文 |
收录类别 | SCOPUS ; EI ; CSCD |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6648986 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Qi, Ming,Luo, Jinsheng,Shirakashi, J.,et al. Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE[J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,1993,14(8):462-467. |
APA | Qi, Ming.,Luo, Jinsheng.,Shirakashi, J..,Yamada, T..,Nozaki, S..,...&Konagai, M..(1993).Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE.Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,14(8),462-467. |
MLA | Qi, Ming,et al."Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE".Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 14.8(1993):462-467. |
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