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	Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence
	Zhuang, Huizhao[1]; Xue, Shoubin[2]; Zhang, Shiying[1]; Hu, Lijun[1]; Li, Baoli[1]; Xue, Chengshan[1]
	2008
卷号	40期号:4页码:828-832
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6420353
专题	山东师范大学
作者单位	1.[1] Institute of Semiconductors, Shandong Normal University, Ji'nan, 250014, China 2.[2] SOI Group, Institute of Microelectronics, Peking University, Beijing, 100871, China
推荐引用方式 GB/T 7714	Zhuang, Huizhao[1],Xue, Shoubin[2],Zhang, Shiying[1],et al. Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence[J],2008,40(4):828-832.
APA	Zhuang, Huizhao[1],Xue, Shoubin[2],Zhang, Shiying[1],Hu, Lijun[1],Li, Baoli[1],&Xue, Chengshan[1].(2008).Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence.,40(4),828-832.
MLA	Zhuang, Huizhao[1],et al."Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence".40.4(2008):828-832.

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