Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence | |
Zhuang, Huizhao[1]; Xue, Shoubin[2]; Zhang, Shiying[1]; Hu, Lijun[1]; Li, Baoli[1]; Xue, Chengshan[1] | |
2008 | |
卷号 | 40期号:4页码:828-832 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6420353 |
专题 | 山东师范大学 |
作者单位 | 1.[1] Institute of Semiconductors, Shandong Normal University, Ji'nan, 250014, China 2.[2] SOI Group, Institute of Microelectronics, Peking University, Beijing, 100871, China |
推荐引用方式 GB/T 7714 | Zhuang, Huizhao[1],Xue, Shoubin[2],Zhang, Shiying[1],et al. Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence[J],2008,40(4):828-832. |
APA | Zhuang, Huizhao[1],Xue, Shoubin[2],Zhang, Shiying[1],Hu, Lijun[1],Li, Baoli[1],&Xue, Chengshan[1].(2008).Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence.,40(4),828-832. |
MLA | Zhuang, Huizhao[1],et al."Growth of GaN nanorods prepared by ammoniating Ga2O3/ZnO films on Si substrates and their properties: Structure, morphology, chemical state and photoluminescence".40.4(2008):828-832. |
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