QQ客服 官方微博 反馈留言

	Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering
	Xue, CS; Wei, QQ; Sun, ZC; Dong, ZH; Sun, HB; Shi, LW
	2004
卷号	15期号:7页码:724-726
URL标识	查看原文
WOS记录号	WOS:000223025900011
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5777829
专题	山东师范大学
作者单位	[1]Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Xue, CS,Wei, QQ,Sun, ZC,et al. Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering[J],2004,15(7):724-726.
APA	Xue, CS,Wei, QQ,Sun, ZC,Dong, ZH,Sun, HB,&Shi, LW.(2004).Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering.,15(7),724-726.
MLA	Xue, CS,et al."Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering".15.7(2004):724-726.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。