Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering | |
Xue, CS; Wei, QQ; Sun, ZC; Dong, ZH; Sun, HB; Shi, LW | |
2004 | |
卷号 | 15期号:7页码:724-726 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000223025900011 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5777829 |
专题 | 山东师范大学 |
作者单位 | [1]Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Xue, CS,Wei, QQ,Sun, ZC,et al. Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering[J],2004,15(7):724-726. |
APA | Xue, CS,Wei, QQ,Sun, ZC,Dong, ZH,Sun, HB,&Shi, LW.(2004).Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering.,15(7),724-726. |
MLA | Xue, CS,et al."Fabrication of GaN nanowires by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering".15.7(2004):724-726. |
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