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	Synthesis of three kinds of GaN nanowires through Ga2O3 films' reaction with ammonia
	Dong, ZH; Xue, CS; Zhuang, HZ; Wang, SY; Gao, HY; Tian, DH; Wu, YX; He, HT; Liu, Y
	2005
卷号	27期号:1-2页码:32-37
URL标识	查看原文
WOS记录号	WOS:000227813200006
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5776988
专题	山东师范大学
作者单位	[1]Shandong Normal Univ, Inst Semicond, Funct Mat Lab, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Dong, ZH,Xue, CS,Zhuang, HZ,et al. Synthesis of three kinds of GaN nanowires through Ga2O3 films' reaction with ammonia[J],2005,27(1-2):32-37.
APA	Dong, ZH.,Xue, CS.,Zhuang, HZ.,Wang, SY.,Gao, HY.,...&Liu, Y.(2005).Synthesis of three kinds of GaN nanowires through Ga2O3 films' reaction with ammonia.,27(1-2),32-37.
MLA	Dong, ZH,et al."Synthesis of three kinds of GaN nanowires through Ga2O3 films' reaction with ammonia".27.1-2(2005):32-37.

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