Synthesis of three kinds of GaN nanowires through Ga2O3 films' reaction with ammonia | |
Dong, ZH; Xue, CS; Zhuang, HZ; Wang, SY; Gao, HY; Tian, DH; Wu, YX; He, HT; Liu, Y | |
2005 | |
卷号 | 27期号:1-2页码:32-37 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000227813200006 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5776988 |
专题 | 山东师范大学 |
作者单位 | [1]Shandong Normal Univ, Inst Semicond, Funct Mat Lab, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Dong, ZH,Xue, CS,Zhuang, HZ,et al. Synthesis of three kinds of GaN nanowires through Ga2O3 films' reaction with ammonia[J],2005,27(1-2):32-37. |
APA | Dong, ZH.,Xue, CS.,Zhuang, HZ.,Wang, SY.,Gao, HY.,...&Liu, Y.(2005).Synthesis of three kinds of GaN nanowires through Ga2O3 films' reaction with ammonia.,27(1-2),32-37. |
MLA | Dong, ZH,et al."Synthesis of three kinds of GaN nanowires through Ga2O3 films' reaction with ammonia".27.1-2(2005):32-37. |
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