Influence of substrate bias voltage on the microstructure of nc-SiOx:H film | |
Li Hui-Min[1]; Yu Wei[2]; Xu Yan-Mei[3]; Ji Yun[4]; Jiang Zhao-Yi[5]; Wang Xin-Zhan[6]; Li Xiao-Wei[7]; Fu Guang-Sheng[8] | |
刊名 | CHINESE PHYSICS B |
2015 | |
卷号 | 24期号:2 |
关键词 | nc-SiOx:H microstructure substrate bias voltage |
ISSN号 | 1674-1056 |
DOI | http://dx.doi.org/10.1088/1674-1056/24/2/028102 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5072670 |
专题 | 河北大学 |
作者单位 | 1.[1]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 2.[2]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 3.[3]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 4.[4]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 5.[5]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 6.[6]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 7.[7]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. 8.[8]Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China. |
推荐引用方式 GB/T 7714 | Li Hui-Min[1],Yu Wei[2],Xu Yan-Mei[3],et al. Influence of substrate bias voltage on the microstructure of nc-SiOx:H film[J]. CHINESE PHYSICS B,2015,24(2). |
APA | Li Hui-Min[1].,Yu Wei[2].,Xu Yan-Mei[3].,Ji Yun[4].,Jiang Zhao-Yi[5].,...&Fu Guang-Sheng[8].(2015).Influence of substrate bias voltage on the microstructure of nc-SiOx:H film.CHINESE PHYSICS B,24(2). |
MLA | Li Hui-Min[1],et al."Influence of substrate bias voltage on the microstructure of nc-SiOx:H film".CHINESE PHYSICS B 24.2(2015). |
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