Thermal characteristic of dark resistivity of InGaAs photoconductive semiconductor switches | |
Tian, Liqiang; Zhang, Lin; Li, Enbang; Ji, Weili; Horvat, Josip; Cao, J. C.; Shi, We; Zhang, Chao | |
2019 | |
卷号 | 30页码:15339-15344 |
ISSN号 | 0957-4522 |
DOI | 10.1007/s10854-019-01907-8 |
URL标识 | 查看原文 |
WOS记录号 | WOS:000480558400053 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4968323 |
专题 | 西安理工大学 |
推荐引用方式 GB/T 7714 | Tian, Liqiang,Zhang, Lin,Li, Enbang,et al. Thermal characteristic of dark resistivity of InGaAs photoconductive semiconductor switches[J],2019,30:15339-15344. |
APA | Tian, Liqiang.,Zhang, Lin.,Li, Enbang.,Ji, Weili.,Horvat, Josip.,...&Zhang, Chao.(2019).Thermal characteristic of dark resistivity of InGaAs photoconductive semiconductor switches.,30,15339-15344. |
MLA | Tian, Liqiang,et al."Thermal characteristic of dark resistivity of InGaAs photoconductive semiconductor switches".30(2019):15339-15344. |
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