Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes | |
Lv YJ(吕元杰); Feng ZH(冯志红); Gu GD(顾国栋); Dun SB(敦少博); Yin JY(尹甲运); Wang YG(王元刚); Xu P(徐鹏); Han TT(韩婷婷); Song XB(宋旭波); Cai SJ(蔡树军) | |
刊名 | Chinese Physics B |
2014 | |
期号 | 02页码:430-434 |
关键词 | Al(Ga)N/GaN strain relative permittivity Schottky metal |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4800190 |
专题 | 山东大学 |
作者单位 | National Key Laboratory of Application Specific Integrated Circuit, |
推荐引用方式 GB/T 7714 | Lv YJ,Feng ZH,Gu GD,et al. Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes[J]. Chinese Physics B,2014(02):430-434. |
APA | Lv YJ.,Feng ZH.,Gu GD.,Dun SB.,Yin JY.,...&Lin ZJ.(2014).Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes.Chinese Physics B(02),430-434. |
MLA | Lv YJ,et al."Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes".Chinese Physics B .02(2014):430-434. |
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