Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors | |
Yang, Ming; Lin, Zhaojun; Zhao, Jingtao; Wang, Yutang; Li, Zhiyuan; Lv, Yuanjie; Feng, Zhihong | |
刊名 | SUPERLATTICES AND MICROSTRUCTURES |
2015 | |
卷号 | 85页码:43-49 |
关键词 | AlGaN/AlN/GaN HFETs Sapphire substrate thickness Strain |
DOI | 10.1016/j.spmi.2015.05.020 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4783770 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. 2.[Yang, Ming 3.Lv, Yuanj |
推荐引用方式 GB/T 7714 | Yang, Ming,Lin, Zhaojun,Zhao, Jingtao,et al. Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors[J]. SUPERLATTICES AND MICROSTRUCTURES,2015,85:43-49. |
APA | Yang, Ming.,Lin, Zhaojun.,Zhao, Jingtao.,Wang, Yutang.,Li, Zhiyuan.,...&Feng, Zhihong.(2015).Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors.SUPERLATTICES AND MICROSTRUCTURES,85,43-49. |
MLA | Yang, Ming,et al."Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors".SUPERLATTICES AND MICROSTRUCTURES 85(2015):43-49. |
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