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	High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination
	Gao, Yangyang; Li, Ang; Feng, Qian; Hu, Zhuangzhuang; Feng, Zhaoqing; Zhang, Ke; Lu, Xiaoli; Zhang, Chunfu; Zhou, Hong; Mu, Wenxiang
刊名	NANOSCALE RESEARCH LETTERS
	2019
卷号	Vol.14
关键词	Ga2O3 Schottky diode Argon implantation Edge termination
ISSN号	1556-276X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4744266
专题	湖南大学
作者单位	1.Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Bandgap Semicond Te, Xian 710071, Shaanxi, Peoples R China 2.Shandong Univ, Key Lab Funct Crystal Mat & Device, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
推荐引用方式 GB/T 7714	Gao, Yangyang,Li, Ang,Feng, Qian,et al. High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination[J]. NANOSCALE RESEARCH LETTERS,2019,Vol.14.
APA	Gao, Yangyang.,Li, Ang.,Feng, Qian.,Hu, Zhuangzhuang.,Feng, Zhaoqing.,...&Mu, Wenxiang.(2019).High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination.NANOSCALE RESEARCH LETTERS,Vol.14.
MLA	Gao, Yangyang,et al."High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination".NANOSCALE RESEARCH LETTERS Vol.14(2019).

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