High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination | |
Gao, Yangyang; Li, Ang; Feng, Qian; Hu, Zhuangzhuang; Feng, Zhaoqing; Zhang, Ke; Lu, Xiaoli; Zhang, Chunfu; Zhou, Hong; Mu, Wenxiang | |
刊名 | NANOSCALE RESEARCH LETTERS |
2019 | |
卷号 | Vol.14 |
关键词 | Ga2O3 Schottky diode Argon implantation Edge termination |
ISSN号 | 1556-276X |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4744266 |
专题 | 湖南大学 |
作者单位 | 1.Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Bandgap Semicond Te, Xian 710071, Shaanxi, Peoples R China 2.Shandong Univ, Key Lab Funct Crystal Mat & Device, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China |
推荐引用方式 GB/T 7714 | Gao, Yangyang,Li, Ang,Feng, Qian,et al. High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination[J]. NANOSCALE RESEARCH LETTERS,2019,Vol.14. |
APA | Gao, Yangyang.,Li, Ang.,Feng, Qian.,Hu, Zhuangzhuang.,Feng, Zhaoqing.,...&Mu, Wenxiang.(2019).High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination.NANOSCALE RESEARCH LETTERS,Vol.14. |
MLA | Gao, Yangyang,et al."High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination".NANOSCALE RESEARCH LETTERS Vol.14(2019). |
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