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	In situ preparation of high quality BaTiO3 dielectric films on Si at 350-500 degrees C
	Gao, Yiqun; Yuan, Meiling; Sun, Xin; Ouyang, Jun
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2017
卷号	28期号:1页码:337-343
DOI	10.1007/s10854-016-5528-8
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4588928
专题	山东大学
作者单位	1.Shandong Univ, Suzhou Inst, Suzhou 215123, Peoples R China. 2.Shandong Univ, Sch M
推荐引用方式 GB/T 7714	Gao, Yiqun,Yuan, Meiling,Sun, Xin,et al. In situ preparation of high quality BaTiO3 dielectric films on Si at 350-500 degrees C[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(1):337-343.
APA	Gao, Yiqun,Yuan, Meiling,Sun, Xin,&Ouyang, Jun.(2017).In situ preparation of high quality BaTiO3 dielectric films on Si at 350-500 degrees C.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,28(1),337-343.
MLA	Gao, Yiqun,et al."In situ preparation of high quality BaTiO3 dielectric films on Si at 350-500 degrees C".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 28.1(2017):337-343.

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