In situ preparation of high quality BaTiO3 dielectric films on Si at 350-500 degrees C | |
Gao, Yiqun; Yuan, Meiling; Sun, Xin; Ouyang, Jun | |
刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2017 | |
卷号 | 28期号:1页码:337-343 |
DOI | 10.1007/s10854-016-5528-8 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4588928 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Suzhou Inst, Suzhou 215123, Peoples R China. 2.Shandong Univ, Sch M |
推荐引用方式 GB/T 7714 | Gao, Yiqun,Yuan, Meiling,Sun, Xin,et al. In situ preparation of high quality BaTiO3 dielectric films on Si at 350-500 degrees C[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(1):337-343. |
APA | Gao, Yiqun,Yuan, Meiling,Sun, Xin,&Ouyang, Jun.(2017).In situ preparation of high quality BaTiO3 dielectric films on Si at 350-500 degrees C.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,28(1),337-343. |
MLA | Gao, Yiqun,et al."In situ preparation of high quality BaTiO3 dielectric films on Si at 350-500 degrees C".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 28.1(2017):337-343. |
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