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	Atomic defects in monolayer WSe2tunneling FETs studied by systematic ab initio calculations
	Wu, Jixuan; Fan, Zhiqiang; Chen, Jiezhi; Jiang, Xiangwei
刊名	Applied Physics Express
	2018
卷号	11期号:5
DOI	10.7567/APEX.11.054001
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4580451
专题	山东大学
作者单位	1.School of Information Science and Engineering, Shandong University, Jinan 2.250000, China 3.[Wu, Jixuan 4.Fan, Zhiqiang 5.Jiang
推荐引用方式 GB/T 7714	Wu, Jixuan,Fan, Zhiqiang,Chen, Jiezhi,et al. Atomic defects in monolayer WSe2tunneling FETs studied by systematic ab initio calculations[J]. Applied Physics Express,2018,11(5).
APA	Wu, Jixuan,Fan, Zhiqiang,Chen, Jiezhi,&Jiang, Xiangwei.(2018).Atomic defects in monolayer WSe2tunneling FETs studied by systematic ab initio calculations.Applied Physics Express,11(5).
MLA	Wu, Jixuan,et al."Atomic defects in monolayer WSe2tunneling FETs studied by systematic ab initio calculations".Applied Physics Express 11.5(2018).

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