Atomic defects in monolayer WSe2tunneling FETs studied by systematic ab initio calculations | |
Wu, Jixuan; Fan, Zhiqiang; Chen, Jiezhi; Jiang, Xiangwei | |
刊名 | Applied Physics Express |
2018 | |
卷号 | 11期号:5 |
DOI | 10.7567/APEX.11.054001 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4580451 |
专题 | 山东大学 |
作者单位 | 1.School of Information Science and Engineering, Shandong University, Jinan 2.250000, China 3.[Wu, Jixuan 4.Fan, Zhiqiang 5.Jiang |
推荐引用方式 GB/T 7714 | Wu, Jixuan,Fan, Zhiqiang,Chen, Jiezhi,et al. Atomic defects in monolayer WSe2tunneling FETs studied by systematic ab initio calculations[J]. Applied Physics Express,2018,11(5). |
APA | Wu, Jixuan,Fan, Zhiqiang,Chen, Jiezhi,&Jiang, Xiangwei.(2018).Atomic defects in monolayer WSe2tunneling FETs studied by systematic ab initio calculations.Applied Physics Express,11(5). |
MLA | Wu, Jixuan,et al."Atomic defects in monolayer WSe2tunneling FETs studied by systematic ab initio calculations".Applied Physics Express 11.5(2018). |
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