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	High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes
	Xu, Weidong; Xu, Meng; Jiang, Jianfeng; Luan, Caina; Han, Lin; Feng, Xianjin
刊名	IEEE ELECTRON DEVICE LETTERS
	2019
卷号	40期号:2页码:247-250
关键词	IAZO sputtering TFT
DOI	10.1109/LED.2018.2890280
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4545563
专题	山东大学
作者单位	1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China. 2.[Xu, We
推荐引用方式 GB/T 7714	Xu, Weidong,Xu, Meng,Jiang, Jianfeng,et al. High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes[J]. IEEE ELECTRON DEVICE LETTERS,2019,40(2):247-250.
APA	Xu, Weidong,Xu, Meng,Jiang, Jianfeng,Luan, Caina,Han, Lin,&Feng, Xianjin.(2019).High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes.IEEE ELECTRON DEVICE LETTERS,40(2),247-250.
MLA	Xu, Weidong,et al."High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes".IEEE ELECTRON DEVICE LETTERS 40.2(2019):247-250.

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