High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes | |
Xu, Weidong; Xu, Meng; Jiang, Jianfeng; Luan, Caina; Han, Lin; Feng, Xianjin | |
刊名 | IEEE ELECTRON DEVICE LETTERS |
2019 | |
卷号 | 40期号:2页码:247-250 |
关键词 | IAZO sputtering TFT |
DOI | 10.1109/LED.2018.2890280 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4545563 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China. 2.[Xu, We |
推荐引用方式 GB/T 7714 | Xu, Weidong,Xu, Meng,Jiang, Jianfeng,et al. High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes[J]. IEEE ELECTRON DEVICE LETTERS,2019,40(2):247-250. |
APA | Xu, Weidong,Xu, Meng,Jiang, Jianfeng,Luan, Caina,Han, Lin,&Feng, Xianjin.(2019).High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes.IEEE ELECTRON DEVICE LETTERS,40(2),247-250. |
MLA | Xu, Weidong,et al."High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes".IEEE ELECTRON DEVICE LETTERS 40.2(2019):247-250. |
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