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High performance active image sensor pixel design with circular structure oxide TFT
Rui Geng; Yuxin Gong
刊名Journal of Semiconductors
2019
期号02页码:29-32
关键词a-IGZO TFT active image sensor circular structure high gain
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公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4533902
专题山东大学
作者单位1.School of Information Science and Engineering.
2.Shandong University.
3.School of Internat
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GB/T 7714
Rui Geng,Yuxin Gong. High performance active image sensor pixel design with circular structure oxide TFT[J]. Journal of Semiconductors,2019(02):29-32.
APA Rui Geng,&Yuxin Gong.(2019).High performance active image sensor pixel design with circular structure oxide TFT.Journal of Semiconductors(02),29-32.
MLA Rui Geng,et al."High performance active image sensor pixel design with circular structure oxide TFT".Journal of Semiconductors .02(2019):29-32.
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