High performance active image sensor pixel design with circular structure oxide TFT | |
Rui Geng; Yuxin Gong | |
刊名 | Journal of Semiconductors |
2019 | |
期号 | 02页码:29-32 |
关键词 | a-IGZO TFT active image sensor circular structure high gain |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4533902 |
专题 | 山东大学 |
作者单位 | 1.School of Information Science and Engineering. 2.Shandong University. 3.School of Internat |
推荐引用方式 GB/T 7714 | Rui Geng,Yuxin Gong. High performance active image sensor pixel design with circular structure oxide TFT[J]. Journal of Semiconductors,2019(02):29-32. |
APA | Rui Geng,&Yuxin Gong.(2019).High performance active image sensor pixel design with circular structure oxide TFT.Journal of Semiconductors(02),29-32. |
MLA | Rui Geng,et al."High performance active image sensor pixel design with circular structure oxide TFT".Journal of Semiconductors .02(2019):29-32. |
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